PART |
Description |
Maker |
IDT72V295 IDT72V2105 IDT72V2105L10PF IDT72V2105L15 |
128K x 18 SuperSync FIFO, 3.3V 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072 x 18 262,144 x 18 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO?
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IDT[Integrated Device Technology]
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ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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DSP56371 DSP56371D |
high density CMOS device
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MOTOROLA[Motorola, Inc] Motorola Inc
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SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
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Semtech Corporation
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MACH211SP-10 MACH211SP-10JC MACH211SP-10VC MACH211 |
High-Density EE CMOS Programmable Logic
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AMD[Advanced Micro Devices]
|
CLA90000 |
High Density CMOS Gate Arrays
|
Zarlink Semiconductor
|
CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
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Central Semiconductor C...
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ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
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Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
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Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??) 3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??) High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度,大电3 -相全波桥式整流器(反向电000V的温5℃时平均整流电流45A条,高密度,大电流,三相全波桥整流器 HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp. Semtech Corporation
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ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFAST?/a> High Density PLD In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??High Density PLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
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